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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1163 DESCRIPTION With TO-3PL package Complement to type 2SD1718 Excellent linearity of hFE Wide area of safe operation (ASO) High transition frequency fT APPLICATIONS For high power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PL) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER HAN INC Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector-base voltage SEM GE Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE -180 -180 -5 -15 -25 3.5 UNIT V V V A A PC Collector power dissipation TC=25ae 150 150 -55~150 ae ae W Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency CONDITIONS IC=-10A ;IB=-1A IC=-8A ; VCE=-5V VCB=-180V; IE=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5V IC=-8A ; VCE=-5V IC=-0.5A ; VCE=-5V f=1MHz;VCB=-10V 20 60 20 20 MIN TYP. 2SB1163 SYMBOL VCEsat VBE ICBO IEBO hFE-1 hFE-2 hFE-3 fT COB MAX -2.5 -1.8 -50 -50 UNIT V V |I |I A A 200 Collector output capacitance S P 80-160 100-200 MHz pF hFE-2 classifications Q 60-100 HAN INC SEM GE OND IC TOR UC 230 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1163 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.50 mm) 3 |
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